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SiC in BJT's

TranSiC specializes in developing and manufacturing BJT type power transistors. BJT stands for Bipolar Junction Transistor and when based on the SiC material, has a number of interesting characteristics:

  •  Low conduction losses
  •  Low switching losses
  •  High blocking voltage
  •  High operating temperatures
  •  High Surge current capability

The Bipolar junction power transistor offered by TranSiC is called BitSiC. The BitSiC is a normally-off transistor, which makes the driving of this device both safe and easy.

The turn-on delay is almost negligible and switch transitions are fast due to the low amount of stored charge. As the transistors don’t have to be driven into deep saturation they are practically free from turn-off tail current. The collector-emitter voltage has a positive temperature coefficient and that in combination with the short turn on/off delays make parallel connection easy and safe.

BitSiC transistors are very rugged. They can take high short circuit energy without failure and work in an extended temperature range from –80 to +250 °C.

Die picture